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FGP30N6S2D

FGP30N6S2D

For Reference Only

Part Number FGP30N6S2D
PNEDA Part # FGP30N6S2D
Description IGBT 600V 45A 167W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 6,102
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 25 - May 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGP30N6S2D Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGP30N6S2D
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGP30N6S2D, FGP30N6S2D Datasheet (Total Pages: 12, Size: 281.66 KB)
PDFFGB30N6S2DT Datasheet Cover
FGB30N6S2DT Datasheet Page 2 FGB30N6S2DT Datasheet Page 3 FGB30N6S2DT Datasheet Page 4 FGB30N6S2DT Datasheet Page 5 FGB30N6S2DT Datasheet Page 6 FGB30N6S2DT Datasheet Page 7 FGB30N6S2DT Datasheet Page 8 FGB30N6S2DT Datasheet Page 9 FGB30N6S2DT Datasheet Page 10 FGB30N6S2DT Datasheet Page 11

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FGP30N6S2D Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)45A
Current - Collector Pulsed (Icm)108A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
Power - Max167W
Switching Energy55µJ (on), 100µJ (off)
Input TypeStandard
Gate Charge23nC
Td (on/off) @ 25°C6ns/40ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)46ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

600V, 15A, 56Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-40°C ~ 150°C (TJ)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Switching Energy

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