FGL60N100BNTDTU Datasheet
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Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 180W Switching Energy - Input Type Standard Gate Charge 275nC Td (on/off) @ 25°C 140ns/630ns Test Condition 600V, 60A, 51Ohm, 15V Reverse Recovery Time (trr) 1.2µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264-3 |
Manufacturer ON Semiconductor Series - IGBT Type NPT and Trench Voltage - Collector Emitter Breakdown (Max) 1000V Current - Collector (Ic) (Max) 60A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A Power - Max 180W Switching Energy - Input Type Standard Gate Charge 275nC Td (on/off) @ 25°C 140ns/630ns Test Condition 600V, 60A, 51Ohm, 15V Reverse Recovery Time (trr) 1.2µs Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-264-3, TO-264AA Supplier Device Package TO-264-3 |
