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FGL60N100BNTD

FGL60N100BNTD

For Reference Only

Part Number FGL60N100BNTD
PNEDA Part # FGL60N100BNTD
Description IGBT 1000V 60A 180W TO264
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 20,496
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FGL60N100BNTD Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFGL60N100BNTD
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
FGL60N100BNTD, FGL60N100BNTD Datasheet (Total Pages: 9, Size: 511.48 KB)
PDFFGL60N100BNTDTU Datasheet Cover
FGL60N100BNTDTU Datasheet Page 2 FGL60N100BNTDTU Datasheet Page 3 FGL60N100BNTDTU Datasheet Page 4 FGL60N100BNTDTU Datasheet Page 5 FGL60N100BNTDTU Datasheet Page 6 FGL60N100BNTDTU Datasheet Page 7 FGL60N100BNTDTU Datasheet Page 8 FGL60N100BNTDTU Datasheet Page 9

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FGL60N100BNTD Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT and Trench
Voltage - Collector Emitter Breakdown (Max)1000V
Current - Collector (Ic) (Max)60A
Current - Collector Pulsed (Icm)120A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 60A
Power - Max180W
Switching Energy-
Input TypeStandard
Gate Charge275nC
Td (on/off) @ 25°C140ns/630ns
Test Condition600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr)1.2µs
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-264-3, TO-264AA
Supplier Device PackageTO-264-3

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Test Condition

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

250W

Switching Energy

350µJ (on), 100µJ (off)

Input Type

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Gate Charge

95nC

Td (on/off) @ 25°C

19ns/165ns

Test Condition

400V, 20A, 15Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

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SGL160N60UFTU

ON Semiconductor

Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

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Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

40ns/90ns

Test Condition

300V, 80A, 3.9Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-264-3, TO-264AA

Supplier Device Package

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