FQAF19N60 Datasheet
FQAF19N60 Datasheet
Total Pages: 8
Size: 525.71 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
FQAF19N60
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 25V FET Feature - Power Dissipation (Max) 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PF Package / Case TO-3P-3 Full Pack |
