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FQAF19N60

FQAF19N60

For Reference Only

Part Number FQAF19N60
PNEDA Part # FQAF19N60
Description MOSFET N-CH 600V 11.2A TO-3PF
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

FQAF19N60 Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberFQAF19N60
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
FQAF19N60, FQAF19N60 Datasheet (Total Pages: 8, Size: 525.71 KB)
PDFFQAF19N60 Datasheet Cover
FQAF19N60 Datasheet Page 2 FQAF19N60 Datasheet Page 3 FQAF19N60 Datasheet Page 4 FQAF19N60 Datasheet Page 5 FQAF19N60 Datasheet Page 6 FQAF19N60 Datasheet Page 7 FQAF19N60 Datasheet Page 8

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FQAF19N60 Specifications

ManufacturerON Semiconductor
SeriesQFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C11.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)120W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PF
Package / CaseTO-3P-3 Full Pack

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