HGT1S10N120BNS Datasheet
|
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 320µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 320µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 35A Current - Collector Pulsed (Icm) 80A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A Power - Max 298W Switching Energy 320µJ (on), 800µJ (off) Input Type Standard Gate Charge 100nC Td (on/off) @ 25°C 23ns/165ns Test Condition 960V, 10A, 10Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
