HGTP10N120BN
For Reference Only
| Part Number | HGTP10N120BN |
| PNEDA Part # | HGTP10N120BN |
| Description | IGBT 1200V 35A 298W TO220AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,168 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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HGTP10N120BN Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTP10N120BN |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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HGTP10N120BN Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 35A |
| Current - Collector Pulsed (Icm) | 80A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 298W |
| Switching Energy | 320µJ (on), 800µJ (off) |
| Input Type | Standard |
| Gate Charge | 100nC |
| Td (on/off) @ 25°C | 23ns/165ns |
| Test Condition | 960V, 10A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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