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HGT1S12N60A4DS Datasheet

HGT1S12N60A4DS Datasheet
Total Pages: 12
Size: 580.48 KB
ON Semiconductor
This datasheet covers 3 part numbers: HGT1S12N60A4DS, HGTP12N60A4D, HGTG12N60A4D
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HGT1S12N60A4DS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

54A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 50µJ (off)

Input Type

Standard

Gate Charge

78nC

Td (on/off) @ 25°C

17ns/96ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB

HGTP12N60A4D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

54A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 50µJ (off)

Input Type

Standard

Gate Charge

78nC

Td (on/off) @ 25°C

17ns/96ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3

HGTG12N60A4D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

54A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 12A

Power - Max

167W

Switching Energy

55µJ (on), 50µJ (off)

Input Type

Standard

Gate Charge

78nC

Td (on/off) @ 25°C

17ns/96ns

Test Condition

390V, 12A, 10Ohm, 15V

Reverse Recovery Time (trr)

30ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3