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HGT1S12N60A4DS

HGT1S12N60A4DS

For Reference Only

Part Number HGT1S12N60A4DS
PNEDA Part # HGT1S12N60A4DS
Description IGBT 600V 54A 167W D2PAK
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 2,916
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S12N60A4DS Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S12N60A4DS
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S12N60A4DS, HGT1S12N60A4DS Datasheet (Total Pages: 12, Size: 580.48 KB)
PDFHGT1S12N60A4DS Datasheet Cover
HGT1S12N60A4DS Datasheet Page 2 HGT1S12N60A4DS Datasheet Page 3 HGT1S12N60A4DS Datasheet Page 4 HGT1S12N60A4DS Datasheet Page 5 HGT1S12N60A4DS Datasheet Page 6 HGT1S12N60A4DS Datasheet Page 7 HGT1S12N60A4DS Datasheet Page 8 HGT1S12N60A4DS Datasheet Page 9 HGT1S12N60A4DS Datasheet Page 10 HGT1S12N60A4DS Datasheet Page 11

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HGT1S12N60A4DS Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)54A
Current - Collector Pulsed (Icm)96A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Power - Max167W
Switching Energy55µJ (on), 50µJ (off)
Input TypeStandard
Gate Charge78nC
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr)30ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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