HGT1S20N60A4S9A Datasheet
HGT1S20N60A4S9A Datasheet
Total Pages: 8
Size: 904.08 KB
ON Semiconductor
Website: http://www.onsemi.com/
This datasheet covers 1 part numbers:
HGT1S20N60A4S9A
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Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 70A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 20A Power - Max 290W Switching Energy 105µJ (on), 150µJ (off) Input Type Standard Gate Charge 142nC Td (on/off) @ 25°C 15ns/73ns Test Condition 390V, 20A, 3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
