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HGT1S20N60A4S9A

HGT1S20N60A4S9A

For Reference Only

Part Number HGT1S20N60A4S9A
PNEDA Part # HGT1S20N60A4S9A
Description IGBT 600V 70A 290W TO263AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 4,104
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGT1S20N60A4S9A Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGT1S20N60A4S9A
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGT1S20N60A4S9A, HGT1S20N60A4S9A Datasheet (Total Pages: 8, Size: 904.08 KB)
PDFHGT1S20N60A4S9A Datasheet Cover
HGT1S20N60A4S9A Datasheet Page 2 HGT1S20N60A4S9A Datasheet Page 3 HGT1S20N60A4S9A Datasheet Page 4 HGT1S20N60A4S9A Datasheet Page 5 HGT1S20N60A4S9A Datasheet Page 6 HGT1S20N60A4S9A Datasheet Page 7 HGT1S20N60A4S9A Datasheet Page 8

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HGT1S20N60A4S9A Specifications

ManufacturerON Semiconductor
Series-
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)70A
Current - Collector Pulsed (Icm)280A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 20A
Power - Max290W
Switching Energy105µJ (on), 150µJ (off)
Input TypeStandard
Gate Charge142nC
Td (on/off) @ 25°C15ns/73ns
Test Condition390V, 20A, 3Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB

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