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HGTP12N60C3D Datasheet

HGTP12N60C3D Datasheet
Total Pages: 10
Size: 273.21 KB
ON Semiconductor
This datasheet covers 1 part numbers: HGTP12N60C3D
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HGTP12N60C3D

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

24A

Current - Collector Pulsed (Icm)

96A

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 15A

Power - Max

104W

Switching Energy

380µJ (on), 900µJ (off)

Input Type

Standard

Gate Charge

48nC

Td (on/off) @ 25°C

-

Test Condition

-

Reverse Recovery Time (trr)

40ns

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-220-3

Supplier Device Package

TO-220-3