HGTP12N60C3D
For Reference Only
| Part Number | HGTP12N60C3D |
| PNEDA Part # | HGTP12N60C3D |
| Description | IGBT 600V 24A 104W TO220AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,222 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
HGTP12N60C3D Resources
| Brand | ON Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | HGTP12N60C3D |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- HGTP12N60C3D Datasheet
- where to find HGTP12N60C3D
- ON Semiconductor
- ON Semiconductor HGTP12N60C3D
- HGTP12N60C3D PDF Datasheet
- HGTP12N60C3D Stock
- HGTP12N60C3D Pinout
- Datasheet HGTP12N60C3D
- HGTP12N60C3D Supplier
- ON Semiconductor Distributor
- HGTP12N60C3D Price
- HGTP12N60C3D Distributor
HGTP12N60C3D Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 24A |
| Current - Collector Pulsed (Icm) | 96A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Power - Max | 104W |
| Switching Energy | 380µJ (on), 900µJ (off) |
| Input Type | Standard |
| Gate Charge | 48nC |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | 40ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 11A Current - Collector Pulsed (Icm) 22A Vce(on) (Max) @ Vge, Ic 4.3V @ 15V, 5A Power - Max 60W Switching Energy 620µJ (on), 300µJ (off) Input Type Standard Gate Charge 28nC Td (on/off) @ 25°C 50ns/100ns Test Condition 800V, 5A, 50Ohm, 15V Reverse Recovery Time (trr) 51ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 36A Current - Collector Pulsed (Icm) 88A Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 20A Power - Max 230W Switching Energy 1.3mJ (on), 500µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 20ns/90ns Test Condition 600V, 20A, 10Ohm, 15V Reverse Recovery Time (trr) 195ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247 (IXYH) |
Manufacturer Microsemi Corporation Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 650V Current - Collector (Ic) (Max) 134A Current - Collector Pulsed (Icm) 280A Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 70A Power - Max 595W Switching Energy - Input Type Standard Gate Charge 305nC Td (on/off) @ 25°C 18ns/170ns Test Condition 433V, 70A, 4.3Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package T-MAX™ [B2] |
Manufacturer ON Semiconductor Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 34A Current - Collector Pulsed (Icm) 56A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 7A Power - Max 125W Switching Energy 55µJ (on), 60µJ (off) Input Type Standard Gate Charge 37nC Td (on/off) @ 25°C 11ns/100ns Test Condition 390V, 7A, 25Ohm, 15V Reverse Recovery Time (trr) 34ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 16A Current - Collector Pulsed (Icm) 32A Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 9A Power - Max 60W Switching Energy 150µJ (on), 250µJ (off) Input Type Standard Gate Charge 34nC Td (on/off) @ 25°C 28ns/150ns Test Condition 480V, 9A, 50Ohm, 15V Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package D2PAK |
