HGTP12N60C3D
For Reference Only
| Part Number | HGTP12N60C3D |
| PNEDA Part # | HGTP12N60C3D |
| Description | IGBT 600V 24A 104W TO220AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 3,222 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 13 - Jun 18 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGTP12N60C3D Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTP12N60C3D |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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HGTP12N60C3D Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 24A |
| Current - Collector Pulsed (Icm) | 96A |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 15A |
| Power - Max | 104W |
| Switching Energy | 380µJ (on), 900µJ (off) |
| Input Type | Standard |
| Gate Charge | 48nC |
| Td (on/off) @ 25°C | - |
| Test Condition | - |
| Reverse Recovery Time (trr) | 40ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 55A Current - Collector Pulsed (Icm) - Vce(on) (Max) @ Vge, Ic 3V @ 15V, 27A Power - Max 200W Switching Energy - Input Type Standard Gate Charge - Td (on/off) @ 25°C - Test Condition - Reverse Recovery Time (trr) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
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