HGTP5N120BND Datasheet
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Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 21A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Power - Max 167W Switching Energy 450µJ (on), 390µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 22ns/160ns Test Condition 960V, 5A, 25Ohm, 15V Reverse Recovery Time (trr) 65ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220-3 |
Manufacturer ON Semiconductor Series - IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 21A Current - Collector Pulsed (Icm) 40A Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 5A Power - Max 167W Switching Energy 450µJ (on), 390µJ (off) Input Type Standard Gate Charge 53nC Td (on/off) @ 25°C 22ns/160ns Test Condition 960V, 5A, 25Ohm, 15V Reverse Recovery Time (trr) 65ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247-3 |
