HGTP5N120BND
For Reference Only
| Part Number | HGTP5N120BND |
| PNEDA Part # | HGTP5N120BND |
| Description | IGBT 1200V 21A 167W TO220AB |
| Manufacturer | ON Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 8,424 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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HGTP5N120BND Resources
| Brand | ON Semiconductor |
| ECAD Module |
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| Mfr. Part Number | HGTP5N120BND |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
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Notes
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HGTP5N120BND Specifications
| Manufacturer | ON Semiconductor |
| Series | - |
| IGBT Type | NPT |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 21A |
| Current - Collector Pulsed (Icm) | 40A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A |
| Power - Max | 167W |
| Switching Energy | 450µJ (on), 390µJ (off) |
| Input Type | Standard |
| Gate Charge | 53nC |
| Td (on/off) @ 25°C | 22ns/160ns |
| Test Condition | 960V, 5A, 25Ohm, 15V |
| Reverse Recovery Time (trr) | 65ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220-3 |
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