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HGTP5N120BND

HGTP5N120BND

For Reference Only

Part Number HGTP5N120BND
PNEDA Part # HGTP5N120BND
Description IGBT 1200V 21A 167W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 8 - Jul 13 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTP5N120BND Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTP5N120BND
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTP5N120BND, HGTP5N120BND Datasheet (Total Pages: 10, Size: 295.93 KB)
PDFHGTP5N120BND Datasheet Cover
HGTP5N120BND Datasheet Page 2 HGTP5N120BND Datasheet Page 3 HGTP5N120BND Datasheet Page 4 HGTP5N120BND Datasheet Page 5 HGTP5N120BND Datasheet Page 6 HGTP5N120BND Datasheet Page 7 HGTP5N120BND Datasheet Page 8 HGTP5N120BND Datasheet Page 9 HGTP5N120BND Datasheet Page 10

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HGTP5N120BND Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)21A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 5A
Power - Max167W
Switching Energy450µJ (on), 390µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C22ns/160ns
Test Condition960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr)65ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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