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HGTP5N120BND

HGTP5N120BND

For Reference Only

Part Number HGTP5N120BND
PNEDA Part # HGTP5N120BND
Description IGBT 1200V 21A 167W TO220AB
Manufacturer ON Semiconductor
Unit Price Request a Quote
In Stock 8,424
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

HGTP5N120BND Resources

Brand ON Semiconductor
ECAD Module ECAD
Mfr. Part NumberHGTP5N120BND
CategorySemiconductorsTransistorsTransistors - IGBTs - Single
Datasheet
HGTP5N120BND, HGTP5N120BND Datasheet (Total Pages: 10, Size: 295.93 KB)
PDFHGTP5N120BND Datasheet Cover
HGTP5N120BND Datasheet Page 2 HGTP5N120BND Datasheet Page 3 HGTP5N120BND Datasheet Page 4 HGTP5N120BND Datasheet Page 5 HGTP5N120BND Datasheet Page 6 HGTP5N120BND Datasheet Page 7 HGTP5N120BND Datasheet Page 8 HGTP5N120BND Datasheet Page 9 HGTP5N120BND Datasheet Page 10

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HGTP5N120BND Specifications

ManufacturerON Semiconductor
Series-
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)21A
Current - Collector Pulsed (Icm)40A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 5A
Power - Max167W
Switching Energy450µJ (on), 390µJ (off)
Input TypeStandard
Gate Charge53nC
Td (on/off) @ 25°C22ns/160ns
Test Condition960V, 5A, 25Ohm, 15V
Reverse Recovery Time (trr)65ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

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Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 20A

Power - Max

180W

Switching Energy

2.85mJ (on), 6.47mJ (off)

Input Type

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Gate Charge

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Td (on/off) @ 25°C

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Test Condition

960V, 20A, 10Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

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Supplier Device Package

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Manufacturer

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Series

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IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

600V

Current - Collector (Ic) (Max)

75A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 30A

Power - Max

300W

Switching Energy

400µJ (off)

Input Type

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Gate Charge

100nC

Td (on/off) @ 25°C

18ns/130ns

Test Condition

400V, 30A, 3.3Ohm, 15V

Reverse Recovery Time (trr)

25ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Supplier Device Package

TO-268

Manufacturer

IXYS

Series

GenX3™, XPT™

IGBT Type

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Voltage - Collector Emitter Breakdown (Max)

900V

Current - Collector (Ic) (Max)

105A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

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Power - Max

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Switching Energy

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Input Type

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Gate Charge

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Td (on/off) @ 25°C

27ns/78ns

Test Condition

450V, 40A, 5Ohm, 15V

Reverse Recovery Time (trr)

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Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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NGD8201NT4G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

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Current - Collector (Ic) (Max)

20A

Current - Collector Pulsed (Icm)

50A

Vce(on) (Max) @ Vge, Ic

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Power - Max

125W

Switching Energy

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Input Type

Logic

Gate Charge

-

Td (on/off) @ 25°C

-/5µs

Test Condition

300V, 9A, 1kOhm, 5V

Reverse Recovery Time (trr)

-

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Supplier Device Package

DPAK

IRG4PH40UD-EPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

41A

Current - Collector Pulsed (Icm)

82A

Vce(on) (Max) @ Vge, Ic

3.1V @ 15V, 21A

Power - Max

160W

Switching Energy

1.8mJ (on), 1.93mJ (off)

Input Type

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Gate Charge

86nC

Td (on/off) @ 25°C

46ns/97ns

Test Condition

800V, 21A, 10Ohm, 15V

Reverse Recovery Time (trr)

63ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

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Package / Case

TO-247-3

Supplier Device Package

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