IDC08S60CEX7SA1 Datasheet
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Manufacturer Infineon Technologies Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case Die Supplier Device Package Sawn on foil Operating Temperature - Junction - |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 600V Capacitance @ Vr, F 310pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 8A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 100µA @ 600V Capacitance @ Vr, F 310pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case Die Supplier Device Package Die Operating Temperature - Junction -55°C ~ 175°C |
