IDC08S60CEX1SA3
For Reference Only
| Part Number | IDC08S60CEX1SA3 |
| PNEDA Part # | IDC08S60CEX1SA3 |
| Description | DIODE SIC 600V 8A SAWN WAFER |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,734 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 20 - May 25 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IDC08S60CEX1SA3 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IDC08S60CEX1SA3 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
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Notes
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IDC08S60CEX1SA3 Specifications
| Manufacturer | Infineon Technologies |
| Series | CoolSiC™+ |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 8A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0ns |
| Current - Reverse Leakage @ Vr | 100µA @ 600V |
| Capacitance @ Vr, F | 310pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 20V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 750mV @ 3.1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 20V Capacitance @ Vr, F 125pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-204AL, DO-41, Axial Supplier Device Package DO-204AL (DO-41) Operating Temperature - Junction -65°C ~ 125°C |
Manufacturer Infineon Technologies Series CoolSiC™+ Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 16A (DC) Voltage - Forward (Vf) (Max) @ If 1.7V @ 16A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 200µA @ 600V Capacitance @ Vr, F 650pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package PG-TO220-2-2 Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 80V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 810mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 600µA @ 80V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-3 Full Pack, Isolated Tab Supplier Device Package ITO-220AB Operating Temperature - Junction -55°C ~ 150°C |
