Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD06N03LA G Datasheet

IPD06N03LA G Datasheet
Total Pages: 9
Size: 292.49 KB
Infineon Technologies
This datasheet covers 1 part numbers: IPD06N03LA G
IPD06N03LA G Datasheet Page 1
IPD06N03LA G Datasheet Page 2
IPD06N03LA G Datasheet Page 3
IPD06N03LA G Datasheet Page 4
IPD06N03LA G Datasheet Page 5
IPD06N03LA G Datasheet Page 6
IPD06N03LA G Datasheet Page 7
IPD06N03LA G Datasheet Page 8
IPD06N03LA G Datasheet Page 9
IPD06N03LA G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2653pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63