Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPD06N03LA G

IPD06N03LA G

For Reference Only

Part Number IPD06N03LA G
PNEDA Part # IPD06N03LA-G
Description MOSFET N-CH 25V 50A DPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 5,886
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPD06N03LA G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPD06N03LA G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPD06N03LA G, IPD06N03LA G Datasheet (Total Pages: 9, Size: 292.49 KB)
PDFIPD06N03LA G Datasheet Cover
IPD06N03LA G Datasheet Page 2 IPD06N03LA G Datasheet Page 3 IPD06N03LA G Datasheet Page 4 IPD06N03LA G Datasheet Page 5 IPD06N03LA G Datasheet Page 6 IPD06N03LA G Datasheet Page 7 IPD06N03LA G Datasheet Page 8 IPD06N03LA G Datasheet Page 9

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IPD06N03LA G Datasheet
  • where to find IPD06N03LA G
  • Infineon Technologies

  • Infineon Technologies IPD06N03LA G
  • IPD06N03LA G PDF Datasheet
  • IPD06N03LA G Stock

  • IPD06N03LA G Pinout
  • Datasheet IPD06N03LA G
  • IPD06N03LA G Supplier

  • Infineon Technologies Distributor
  • IPD06N03LA G Price
  • IPD06N03LA G Distributor

IPD06N03LA G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

The Products You May Be Interested In

RQ6C050UNTR

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

30mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id

1V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

900pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

DMP3160L-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

122mOhm @ 2.7A, 10V

Vgs(th) (Max) @ Id

2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

227pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.08W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

FDG410NZ

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Rds On (Max) @ Id, Vgs

70mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

535pF @ 10V

FET Feature

-

Power Dissipation (Max)

420mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-88 (SC-70-6)

Package / Case

6-TSSOP, SC-88, SOT-363

IPS70R1K4P7SAKMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

700V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 700mA, 10V

Vgs(th) (Max) @ Id

3.5V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 10V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

158pF @ 400V

FET Feature

-

Power Dissipation (Max)

22.7W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

NP70N10KUF-E1-AY

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

70A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20mOhm @ 35A, 10V

Vgs(th) (Max) @ Id

3.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3750pF @ 25V

FET Feature

-

Power Dissipation (Max)

1.8W (Ta), 120W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Recently Sold

NAND128W3A2BN6E

NAND128W3A2BN6E

Micron Technology Inc.

IC FLASH 128M PARALLEL 48TSOP

PFS7539H

PFS7539H

Power Integrations

IC PFC CTLR 1000W 180VAC 16ESIP

CY2305SXC-1

CY2305SXC-1

Cypress Semiconductor

IC CLK ZDB 5OUT 133MHZ 8SOIC

74HC4066D

74HC4066D

Toshiba Semiconductor and Storage

IC SWITCH QUAD 14SOIC

SMBJ30CA-13-F

SMBJ30CA-13-F

Diodes Incorporated

TVS DIODE 30V 48.4V SMB

L5973ADTR

L5973ADTR

STMicroelectronics

IC REG BUCK ADJUSTABLE 2A 8HSOP

ADV7123SCP170EP-RL

ADV7123SCP170EP-RL

Analog Devices

IC DAC 10BIT A-OUT 48LQFP

VIPER100A

VIPER100A

STMicroelectronics

IC SWIT PWM SMPS CM PENTAWATT5

FLZ6V8A

FLZ6V8A

ON Semiconductor

DIODE ZENER 6.5V 500MW SOD80

HCPL-060L-000E

HCPL-060L-000E

Broadcom

OPTOISO 3.75KV OPN COLLECTOR 8SO

NPT1012B

NPT1012B

M/A-Com Technology Solutions

HEMT N-CH 28V 25W DC-4000MHZ

XCF32PVOG48C

XCF32PVOG48C

Xilinx

IC PROM SRL/PAR 1.8V 32M 48TSOP