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IPP45P03P4L11AKSA1 Datasheet

IPP45P03P4L11AKSA1 Datasheet
Total Pages: 9
Size: 169.1 KB
Infineon Technologies
This datasheet covers 2 part numbers: IPP45P03P4L11AKSA1, IPI45P03P4L11AKSA1
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IPP45P03P4L11AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.1mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3770pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO220-3-1

Package / Case

TO-220-3

IPI45P03P4L11AKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

11.1mOhm @ 45A, 10V

Vgs(th) (Max) @ Id

2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

+5V, -16V

Input Capacitance (Ciss) (Max) @ Vds

3770pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA