IPP45P03P4L11AKSA1
For Reference Only
| Part Number | IPP45P03P4L11AKSA1 |
| PNEDA Part # | IPP45P03P4L11AKSA1 |
| Description | MOSFET P-CH 30V 45A TO220-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 7,146 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 7 - May 12 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
IPP45P03P4L11AKSA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
|
| Mfr. Part Number | IPP45P03P4L11AKSA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- IPP45P03P4L11AKSA1 Datasheet
- where to find IPP45P03P4L11AKSA1
- Infineon Technologies
- Infineon Technologies IPP45P03P4L11AKSA1
- IPP45P03P4L11AKSA1 PDF Datasheet
- IPP45P03P4L11AKSA1 Stock
- IPP45P03P4L11AKSA1 Pinout
- Datasheet IPP45P03P4L11AKSA1
- IPP45P03P4L11AKSA1 Supplier
- Infineon Technologies Distributor
- IPP45P03P4L11AKSA1 Price
- IPP45P03P4L11AKSA1 Distributor
IPP45P03P4L11AKSA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 11.1mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Vgs (Max) | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 3770pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 58W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3-1 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 35A (Ta), 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 109A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 194nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7471pF @ 25V FET Feature - Power Dissipation (Max) 3.3W (Ta), 94W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DIRECTFET L6 Package / Case DirectFET™ Isometric L6 |
Manufacturer STMicroelectronics Series SuperMESH™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 89nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2750pF @ 25V FET Feature - Power Dissipation (Max) 190W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 320mOhm @ 13A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V FET Feature - Power Dissipation (Max) 330W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 44A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 10.9mOhm @ 30A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10.8nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 827pF @ 12V FET Feature - Power Dissipation (Max) 1.27W (Ta), 33.3W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 7.9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 4.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 68nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V FET Feature - Power Dissipation (Max) 40W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 Full Pack, Isolated Tab |
