Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IPS06N03LZ G Datasheet

IPS06N03LZ G Datasheet
Total Pages: 11
Size: 505.15 KB
Infineon Technologies
This datasheet covers 1 part numbers: IPS06N03LZ G
IPS06N03LZ G Datasheet Page 1
IPS06N03LZ G Datasheet Page 2
IPS06N03LZ G Datasheet Page 3
IPS06N03LZ G Datasheet Page 4
IPS06N03LZ G Datasheet Page 5
IPS06N03LZ G Datasheet Page 6
IPS06N03LZ G Datasheet Page 7
IPS06N03LZ G Datasheet Page 8
IPS06N03LZ G Datasheet Page 9
IPS06N03LZ G Datasheet Page 10
IPS06N03LZ G Datasheet Page 11
IPS06N03LZ G

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

25V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.9mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 40µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2653pF @ 15V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO251-3

Package / Case

TO-251-3 Stub Leads, IPak