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IPS06N03LZ G

IPS06N03LZ G

For Reference Only

Part Number IPS06N03LZ G
PNEDA Part # IPS06N03LZ-G
Description MOSFET N-CH 25V 50A IPAK
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 3,436
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPS06N03LZ G Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPS06N03LZ G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPS06N03LZ G, IPS06N03LZ G Datasheet (Total Pages: 11, Size: 505.15 KB)
PDFIPS06N03LZ G Datasheet Cover
IPS06N03LZ G Datasheet Page 2 IPS06N03LZ G Datasheet Page 3 IPS06N03LZ G Datasheet Page 4 IPS06N03LZ G Datasheet Page 5 IPS06N03LZ G Datasheet Page 6 IPS06N03LZ G Datasheet Page 7 IPS06N03LZ G Datasheet Page 8 IPS06N03LZ G Datasheet Page 9 IPS06N03LZ G Datasheet Page 10 IPS06N03LZ G Datasheet Page 11

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IPS06N03LZ G Specifications

ManufacturerInfineon Technologies
SeriesOptiMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2653pF @ 15V
FET Feature-
Power Dissipation (Max)83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

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