IPW50R280CEFKSA1 Datasheet
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Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V FET Feature Super Junction Power Dissipation (Max) 92W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO247-3 Package / Case TO-247-3 |
Manufacturer Infineon Technologies Series CoolMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 13A (Tc) Drive Voltage (Max Rds On, Min Rds On) 13V Rds On (Max) @ Id, Vgs 280mOhm @ 4.2A, 13V Vgs(th) (Max) @ Id 3.5V @ 350µA Gate Charge (Qg) (Max) @ Vgs 32.6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 773pF @ 100V FET Feature Super Junction Power Dissipation (Max) 92W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3-1 Package / Case TO-220-3 |
