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IPP50R280CEXKSA1

IPP50R280CEXKSA1

For Reference Only

Part Number IPP50R280CEXKSA1
PNEDA Part # IPP50R280CEXKSA1
Description MOSFET N-CH 500V 13A PG-TO220
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 22,512
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 30 - May 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IPP50R280CEXKSA1 Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIPP50R280CEXKSA1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IPP50R280CEXKSA1, IPP50R280CEXKSA1 Datasheet (Total Pages: 14, Size: 2,146.5 KB)
PDFIPW50R280CEFKSA1 Datasheet Cover
IPW50R280CEFKSA1 Datasheet Page 2 IPW50R280CEFKSA1 Datasheet Page 3 IPW50R280CEFKSA1 Datasheet Page 4 IPW50R280CEFKSA1 Datasheet Page 5 IPW50R280CEFKSA1 Datasheet Page 6 IPW50R280CEFKSA1 Datasheet Page 7 IPW50R280CEFKSA1 Datasheet Page 8 IPW50R280CEFKSA1 Datasheet Page 9 IPW50R280CEFKSA1 Datasheet Page 10 IPW50R280CEFKSA1 Datasheet Page 11

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IPP50R280CEXKSA1 Specifications

ManufacturerInfineon Technologies
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)13V
Rds On (Max) @ Id, Vgs280mOhm @ 4.2A, 13V
Vgs(th) (Max) @ Id3.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs32.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds773pF @ 100V
FET FeatureSuper Junction
Power Dissipation (Max)92W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3

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