IRG8P50N120KD-EPBF Datasheet
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Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 105A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 350W Switching Energy 2.3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 35ns/190ns Test Condition 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AD |
Manufacturer Infineon Technologies Series - IGBT Type - Voltage - Collector Emitter Breakdown (Max) 1200V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 105A Vce(on) (Max) @ Vge, Ic 2V @ 15V, 35A Power - Max 350W Switching Energy 2.3mJ (on), 1.9mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 35ns/190ns Test Condition 600V, 35A, 5Ohm, 15V Reverse Recovery Time (trr) 170ns Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Through Hole Package / Case TO-247-3 Supplier Device Package TO-247AC |
