IRG8P50N120KD-EPBF
For Reference Only
| Part Number | IRG8P50N120KD-EPBF |
| PNEDA Part # | IRG8P50N120KD-EPBF |
| Description | IGBT 1200V 80A 305W TO-247AD |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 2,844 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IRG8P50N120KD-EPBF Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IRG8P50N120KD-EPBF |
| Category | Semiconductors › Transistors › Transistors - IGBTs - Single |
| Datasheet |
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IRG8P50N120KD-EPBF Specifications
| Manufacturer | Infineon Technologies |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 105A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 35A |
| Power - Max | 350W |
| Switching Energy | 2.3mJ (on), 1.9mJ (off) |
| Input Type | Standard |
| Gate Charge | 315nC |
| Td (on/off) @ 25°C | 35ns/190ns |
| Test Condition | 600V, 35A, 5Ohm, 15V |
| Reverse Recovery Time (trr) | 170ns |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AD |
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Manufacturer IXYS Series GenX3™, XPT™ IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 175A Current - Collector Pulsed (Icm) 1000A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 100A Power - Max 520W Switching Energy 2.85mJ (on), 2.9mJ (off) Input Type Standard Gate Charge 315nC Td (on/off) @ 25°C 48ns/160ns Test Condition 360V, 100A, 1Ohm, 15V Reverse Recovery Time (trr) 100ns Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 24-PowerSMD, 21 Leads Supplier Device Package 24-SMPD |
