IRLMS2002TR Datasheet
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Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Micro6™(SOT23-6) Package / Case SOT-23-6 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1310pF @ 15V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature - Mounting Type Surface Mount Supplier Device Package Micro6™(SOT23-6) Package / Case SOT-23-6 |
