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IRLMS2002TR

IRLMS2002TR

For Reference Only

Part Number IRLMS2002TR
PNEDA Part # IRLMS2002TR
Description MOSFET N-CH 20V 6.5A 6-TSOP
Manufacturer Infineon Technologies
Unit Price Request a Quote
In Stock 7,344
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IRLMS2002TR Resources

Brand Infineon Technologies
ECAD Module ECAD
Mfr. Part NumberIRLMS2002TR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IRLMS2002TR, IRLMS2002TR Datasheet (Total Pages: 8, Size: 95.26 KB)
PDFIRLMS2002TR Datasheet Cover
IRLMS2002TR Datasheet Page 2 IRLMS2002TR Datasheet Page 3 IRLMS2002TR Datasheet Page 4 IRLMS2002TR Datasheet Page 5 IRLMS2002TR Datasheet Page 6 IRLMS2002TR Datasheet Page 7 IRLMS2002TR Datasheet Page 8

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IRLMS2002TR Specifications

ManufacturerInfineon Technologies
SeriesHEXFET®
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds1310pF @ 15V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageMicro6™(SOT23-6)
Package / CaseSOT-23-6

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