Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXFN32N120P Datasheet

IXFN32N120P Datasheet
Total Pages: 5
Size: 119.89 KB
IXYS
This datasheet covers 1 part numbers: IXFN32N120P
IXFN32N120P Datasheet Page 1
IXFN32N120P Datasheet Page 2
IXFN32N120P Datasheet Page 3
IXFN32N120P Datasheet Page 4
IXFN32N120P Datasheet Page 5

Manufacturer

IXYS

Series

Polar™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

310mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

360nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

21000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC