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IXFN32N120P

IXFN32N120P

For Reference Only

Part Number IXFN32N120P
PNEDA Part # IXFN32N120P
Description MOSFET N-CH 1200V 32A SOT-227B
Manufacturer IXYS
Unit Price Request a Quote
In Stock 7,812
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 1 - May 6 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN32N120P Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN32N120P
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN32N120P, IXFN32N120P Datasheet (Total Pages: 5, Size: 119.89 KB)
PDFIXFN32N120P Datasheet Cover
IXFN32N120P Datasheet Page 2 IXFN32N120P Datasheet Page 3 IXFN32N120P Datasheet Page 4 IXFN32N120P Datasheet Page 5

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IXFN32N120P Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs310mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs360nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds21000pF @ 25V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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