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IXFN360N10T Datasheet

IXFN360N10T Datasheet
Total Pages: 5
Size: 160.86 KB
IXYS
This datasheet covers 1 part numbers: IXFN360N10T
IXFN360N10T Datasheet Page 1
IXFN360N10T Datasheet Page 2
IXFN360N10T Datasheet Page 3
IXFN360N10T Datasheet Page 4
IXFN360N10T Datasheet Page 5

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

360A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 180A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

505nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

36000pF @ 25V

FET Feature

-

Power Dissipation (Max)

830W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC