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IXFN360N10T

IXFN360N10T

For Reference Only

Part Number IXFN360N10T
PNEDA Part # IXFN360N10T
Description MOSFET N-CH 100V 360A SOT-227B
Manufacturer IXYS
Unit Price
1 ---------- $206.0735
50 ---------- $196.4138
100 ---------- $186.7541
200 ---------- $177.0944
400 ---------- $169.0446
500 ---------- $160.9949
In Stock 1,567
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN360N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN360N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN360N10T, IXFN360N10T Datasheet (Total Pages: 5, Size: 160.86 KB)
PDFIXFN360N10T Datasheet Cover
IXFN360N10T Datasheet Page 2 IXFN360N10T Datasheet Page 3 IXFN360N10T Datasheet Page 4 IXFN360N10T Datasheet Page 5

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IXFN360N10T Specifications

ManufacturerIXYS
SeriesHiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C360A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs505nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds36000pF @ 25V
FET Feature-
Power Dissipation (Max)830W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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