Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

CSD19536KTTT

CSD19536KTTT

For Reference Only

Part Number CSD19536KTTT
PNEDA Part # CSD19536KTTT
Description MOSFET N-CH 100V 200A TO263
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 19,686
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 5 - May 10 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

CSD19536KTTT Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberCSD19536KTTT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • CSD19536KTTT Datasheet
  • where to find CSD19536KTTT
  • Texas Instruments

  • Texas Instruments CSD19536KTTT
  • CSD19536KTTT PDF Datasheet
  • CSD19536KTTT Stock

  • CSD19536KTTT Pinout
  • Datasheet CSD19536KTTT
  • CSD19536KTTT Supplier

  • Texas Instruments Distributor
  • CSD19536KTTT Price
  • CSD19536KTTT Distributor

CSD19536KTTT Specifications

Manufacturer
SeriesNexFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C200A (Ta)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs153nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12000pF @ 50V
FET Feature-
Power Dissipation (Max)375W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDDPAK/TO-263-3
Package / CaseTO-263-4, D²Pak (3 Leads + Tab), TO-263AA

The Products You May Be Interested In

SI4406DY-T1-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

4.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

50nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.6W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

AUIRFS4310ZTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

120A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6mOhm @ 75A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

170nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6860pF @ 50V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

APT4M120K

Microsemi

Manufacturer

Microsemi Corporation

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1200V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1385pF @ 25V

FET Feature

-

Power Dissipation (Max)

225W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220 [K]

Package / Case

TO-220-3

IRF540STRRPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

77mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

72nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1700pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.7W (Ta), 150W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

BUZ80A

Infineon Technologies

Manufacturer

Infineon Technologies

Series

SIPMOS®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

3.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1350pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

Recently Sold

S25FL064P0XMFI001

S25FL064P0XMFI001

Cypress Semiconductor

IC FLASH 64M SPI 104MHZ 16SOIC

BYG10D-E3/TR

BYG10D-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.5A

EMZA250ADA101MF80G

EMZA250ADA101MF80G

United Chemi-Con

CAP ALUM 100UF 20% 25V SMD

150040RS73240

150040RS73240

Wurth Electronics

LED RED CLEAR 0402 SMD

MAX3208EAUB+T

MAX3208EAUB+T

Maxim Integrated

TVS DIODE 10UMAX

ESD5V0D3-TP

ESD5V0D3-TP

Micro Commercial Co

TVS DIODE 5V 15.5V SOD323

LT6350HMS8#PBF

LT6350HMS8#PBF

Linear Technology/Analog Devices

IC DIFF CONVERT/ADC DRIVER 8MSOP

WIZ810MJ

WIZ810MJ

WIZnet

CNTRLR ETHERNET 10/100 BASE-T/TX

ADM3260ARSZ

ADM3260ARSZ

Analog Devices

DGTL ISO 2.5KV 2CH I2C 20SSOP

74HC573D

74HC573D

Toshiba Semiconductor and Storage

IC LATCH OCTAL D 3ST 20SOIC

ST16C2552IJ44TR-F

ST16C2552IJ44TR-F

MaxLinear, Inc.

IC UART FIFO 16B DUAL 44PLCC

MAX3491ESD+T

MAX3491ESD+T

Maxim Integrated

IC TRANSCEIVER FULL 1/1 14SOIC