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IXFN420N10T Datasheet

IXFN420N10T Datasheet
Total Pages: 6
Size: 170.38 KB
IXYS
This datasheet covers 1 part numbers: IXFN420N10T
IXFN420N10T Datasheet Page 1
IXFN420N10T Datasheet Page 2
IXFN420N10T Datasheet Page 3
IXFN420N10T Datasheet Page 4
IXFN420N10T Datasheet Page 5
IXFN420N10T Datasheet Page 6

Manufacturer

IXYS

Series

GigaMOS™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

420A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2.3mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

670nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

47000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1070W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC