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IXFN420N10T

IXFN420N10T

For Reference Only

Part Number IXFN420N10T
PNEDA Part # IXFN420N10T
Description MOSFET N-CH 100V 420A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 6,216
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXFN420N10T Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXFN420N10T
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXFN420N10T, IXFN420N10T Datasheet (Total Pages: 6, Size: 170.38 KB)
PDFIXFN420N10T Datasheet Cover
IXFN420N10T Datasheet Page 2 IXFN420N10T Datasheet Page 3 IXFN420N10T Datasheet Page 4 IXFN420N10T Datasheet Page 5 IXFN420N10T Datasheet Page 6

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IXFN420N10T Specifications

ManufacturerIXYS
SeriesGigaMOS™ HiPerFET™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C420A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.3mOhm @ 60A, 10V
Vgs(th) (Max) @ Id5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs670nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds47000pF @ 25V
FET Feature-
Power Dissipation (Max)1070W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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