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IXKG25N80C Datasheet

IXKG25N80C Datasheet
Total Pages: 2
Size: 500.25 KB
IXYS
This datasheet covers 1 part numbers: IXKG25N80C
IXKG25N80C Datasheet Page 1
IXKG25N80C Datasheet Page 2
IXKG25N80C

IXYS

Manufacturer

IXYS

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

25A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

150mOhm @ 9A, 10V

Vgs(th) (Max) @ Id

4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

166nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISO264™

Package / Case

ISO264™