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IXKG25N80C

IXKG25N80C

For Reference Only

Part Number IXKG25N80C
PNEDA Part # IXKG25N80C
Description MOSFET N-CH 800V 25A ISO264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,922
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Apr 29 - May 4 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXKG25N80C Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXKG25N80C
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXKG25N80C, IXKG25N80C Datasheet (Total Pages: 2, Size: 500.25 KB)
PDFIXKG25N80C Datasheet Cover
IXKG25N80C Datasheet Page 2

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IXKG25N80C Specifications

ManufacturerIXYS
SeriesCoolMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 9A, 10V
Vgs(th) (Max) @ Id4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs166nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)250W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageISO264™
Package / CaseISO264™

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Current - Continuous Drain (Id) @ 25°C

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