Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

SI8489EDB-T2-E1

SI8489EDB-T2-E1

For Reference Only

Part Number SI8489EDB-T2-E1
PNEDA Part # SI8489EDB-T2-E1
Description MOSFET P-CH 20V MICROFOOT
Manufacturer Vishay Siliconix
Unit Price Request a Quote
In Stock 4,716
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

SI8489EDB-T2-E1 Resources

Brand Vishay Siliconix
ECAD Module ECAD
Mfr. Part NumberSI8489EDB-T2-E1
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
SI8489EDB-T2-E1, SI8489EDB-T2-E1 Datasheet (Total Pages: 8, Size: 165.84 KB)
PDFSI8489EDB-T2-E1 Datasheet Cover
SI8489EDB-T2-E1 Datasheet Page 2 SI8489EDB-T2-E1 Datasheet Page 3 SI8489EDB-T2-E1 Datasheet Page 4 SI8489EDB-T2-E1 Datasheet Page 5 SI8489EDB-T2-E1 Datasheet Page 6 SI8489EDB-T2-E1 Datasheet Page 7 SI8489EDB-T2-E1 Datasheet Page 8

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • SI8489EDB-T2-E1 Datasheet
  • where to find SI8489EDB-T2-E1
  • Vishay Siliconix

  • Vishay Siliconix SI8489EDB-T2-E1
  • SI8489EDB-T2-E1 PDF Datasheet
  • SI8489EDB-T2-E1 Stock

  • SI8489EDB-T2-E1 Pinout
  • Datasheet SI8489EDB-T2-E1
  • SI8489EDB-T2-E1 Supplier

  • Vishay Siliconix Distributor
  • SI8489EDB-T2-E1 Price
  • SI8489EDB-T2-E1 Distributor

SI8489EDB-T2-E1 Specifications

ManufacturerVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Rds On (Max) @ Id, Vgs44mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds765pF @ 10V
FET Feature-
Power Dissipation (Max)780mW (Ta), 1.8W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-Microfoot
Package / Case4-UFBGA

The Products You May Be Interested In

STD45P4LLF6AG

STMicroelectronics

Manufacturer

STMicroelectronics

Series

Automotive, AEC-Q101, STripFET™ F6

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

15mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65.5nC @ 10V

Vgs (Max)

±18V

Input Capacitance (Ciss) (Max) @ Vds

3525pF @ 25V

FET Feature

-

Power Dissipation (Max)

58W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

HUF75329D3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

26mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

65nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1060pF @ 25V

FET Feature

-

Power Dissipation (Max)

128W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

NTMS4873NFR2G

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

7.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 15V

FET Feature

-

Power Dissipation (Max)

870mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SOIC

Package / Case

8-SOIC (0.154", 3.90mm Width)

SPI08N80C3

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

650mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id

3.9V @ 470µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 100V

FET Feature

-

Power Dissipation (Max)

104W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO262-3

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

STW26N60M2

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MDmesh™ M2

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

20A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

165mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

1360pF @ 100V

FET Feature

-

Power Dissipation (Max)

169W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXFH)

Package / Case

TO-247-3

Recently Sold

M2GL005-TQ144I

M2GL005-TQ144I

Microsemi

IC FPGA 84 I/O 144TQFP

AT21CS01-STUM10-T

AT21CS01-STUM10-T

Microchip Technology

IC EEPROM 1K I2C 125KHZ SOT23

PIC12F629-I/SN

PIC12F629-I/SN

Microchip Technology

IC MCU 8BIT 1.75KB FLASH 8SOIC

MAX811SEUS+T

MAX811SEUS+T

Maxim Integrated

IC MPU V-MONITOR 2.93V SOT143-4

DSPIC33FJ256GP710-I/PF

DSPIC33FJ256GP710-I/PF

Microchip Technology

IC MCU 16BIT 256KB FLASH 100TQFP

PIC18F2455-I/SO

PIC18F2455-I/SO

Microchip Technology

IC MCU 8BIT 24KB FLASH 28SOIC

SS34-E3/57T

SS34-E3/57T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 3A DO214AB

AT89S52-24AUR

AT89S52-24AUR

Microchip Technology

IC MCU 8BIT 8KB FLASH 44TQFP

BC846B

BC846B

ON Semiconductor

TRANS NPN 65V 0.1A SOT-23

AT28C16-15TC

AT28C16-15TC

Microchip Technology

IC EEPROM 16K PARALLEL 28TSOP

MMSZ5233BT1G

MMSZ5233BT1G

ON Semiconductor

DIODE ZENER 6V 500MW SOD123

AT24C04D-SSHM-T

AT24C04D-SSHM-T

Microchip Technology

IC EEPROM 4K I2C 1MHZ 8SOIC