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STW26N60M2

STW26N60M2

For Reference Only

Part Number STW26N60M2
PNEDA Part # STW26N60M2
Description MOSFET N-CH 600V 20A TO247
Manufacturer STMicroelectronics
Unit Price Request a Quote
In Stock 3,510
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

STW26N60M2 Resources

Brand STMicroelectronics
ECAD Module ECAD
Mfr. Part NumberSTW26N60M2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
STW26N60M2, STW26N60M2 Datasheet (Total Pages: 16, Size: 800.56 KB)
PDFSTW26N60M2 Datasheet Cover
STW26N60M2 Datasheet Page 2 STW26N60M2 Datasheet Page 3 STW26N60M2 Datasheet Page 4 STW26N60M2 Datasheet Page 5 STW26N60M2 Datasheet Page 6 STW26N60M2 Datasheet Page 7 STW26N60M2 Datasheet Page 8 STW26N60M2 Datasheet Page 9 STW26N60M2 Datasheet Page 10 STW26N60M2 Datasheet Page 11

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STW26N60M2 Specifications

ManufacturerSTMicroelectronics
SeriesMDmesh™ M2
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1360pF @ 100V
FET Feature-
Power Dissipation (Max)169W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXFH)
Package / CaseTO-247-3

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