IPB083N15N5LFATMA1
For Reference Only
| Part Number | IPB083N15N5LFATMA1 |
| PNEDA Part # | IPB083N15N5LFATMA1 |
| Description | MOSFET N-CH 150V 105A TO263-3 |
| Manufacturer | Infineon Technologies |
| Unit Price | Request a Quote |
| In Stock | 4,752 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 8 - May 13 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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IPB083N15N5LFATMA1 Resources
| Brand | Infineon Technologies |
| ECAD Module |
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| Mfr. Part Number | IPB083N15N5LFATMA1 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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IPB083N15N5LFATMA1 Specifications
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25°C | 105A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 100A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 134µA |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 75V |
| FET Feature | - |
| Power Dissipation (Max) | 179W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263AB) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 18.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 25V FET Feature - Power Dissipation (Max) 88W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 52A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 60mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 150nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 25V FET Feature - Power Dissipation (Max) 360W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264AA (IXFK) Package / Case TO-264-3, TO-264AA |
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 3.65mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4556pF @ 30V FET Feature - Power Dissipation (Max) 2.8W (Ta), 136W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
