IXTB30N100L Datasheet
IXTB30N100L Datasheet
Total Pages: 5
Size: 147.09 KB
IXYS
This datasheet covers 1 part numbers:
IXTB30N100L
|
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 20V Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 20V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 545nC @ 20V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 25V FET Feature - Power Dissipation (Max) 800W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |
