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IXTB30N100L

IXTB30N100L

For Reference Only

Part Number IXTB30N100L
PNEDA Part # IXTB30N100L
Description MOSFET N-CH 1000V 30A PLUS264
Manufacturer IXYS
Unit Price Request a Quote
In Stock 8,604
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTB30N100L Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTB30N100L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTB30N100L, IXTB30N100L Datasheet (Total Pages: 5, Size: 147.09 KB)
PDFIXTB30N100L Datasheet Cover
IXTB30N100L Datasheet Page 2 IXTB30N100L Datasheet Page 3 IXTB30N100L Datasheet Page 4 IXTB30N100L Datasheet Page 5

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IXTB30N100L Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs545nC @ 20V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13200pF @ 25V
FET Feature-
Power Dissipation (Max)800W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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