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IXTH260N055T2 Datasheet

IXTH260N055T2 Datasheet
Total Pages: 6
Size: 166.7 KB
IXYS
This datasheet covers 1 part numbers: IXTH260N055T2
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IXTH260N055T2 Datasheet Page 3
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IXTH260N055T2 Datasheet Page 5
IXTH260N055T2 Datasheet Page 6

Manufacturer

IXYS

Series

TrenchT2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

260A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

10800pF @ 25V

FET Feature

-

Power Dissipation (Max)

480W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3