Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

IXTH260N055T2

IXTH260N055T2

For Reference Only

Part Number IXTH260N055T2
PNEDA Part # IXTH260N055T2
Description MOSFET N-CH 55V 260A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 3,798
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH260N055T2 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH260N055T2
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH260N055T2, IXTH260N055T2 Datasheet (Total Pages: 6, Size: 166.7 KB)
PDFIXTH260N055T2 Datasheet Cover
IXTH260N055T2 Datasheet Page 2 IXTH260N055T2 Datasheet Page 3 IXTH260N055T2 Datasheet Page 4 IXTH260N055T2 Datasheet Page 5 IXTH260N055T2 Datasheet Page 6

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • IXTH260N055T2 Datasheet
  • where to find IXTH260N055T2
  • IXYS

  • IXYS IXTH260N055T2
  • IXTH260N055T2 PDF Datasheet
  • IXTH260N055T2 Stock

  • IXTH260N055T2 Pinout
  • Datasheet IXTH260N055T2
  • IXTH260N055T2 Supplier

  • IXYS Distributor
  • IXTH260N055T2 Price
  • IXTH260N055T2 Distributor

IXTH260N055T2 Specifications

ManufacturerIXYS
SeriesTrenchT2™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C260A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs140nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10800pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

The Products You May Be Interested In

CSD19538Q2T

Texas Instruments

Manufacturer

Series

NexFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

13.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

59mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.6nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

454pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.5W (Ta), 20.2W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-WSON (2x2)

Package / Case

6-WDFN Exposed Pad

STP50NE10

STMicroelectronics

Manufacturer

STMicroelectronics

Series

STripFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

27mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

166nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

APT38F80L

Microsemi

Manufacturer

Microsemi Corporation

Series

POWER MOS 8™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

41A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 20A, 10V

Vgs(th) (Max) @ Id

5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

260nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

8070pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264 [L]

Package / Case

TO-264-3, TO-264AA

STB16NS25T4

STMicroelectronics

Manufacturer

STMicroelectronics

Series

MESH OVERLAY™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

250V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

280mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1270pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

STS3P6F6

STMicroelectronics

Manufacturer

STMicroelectronics

Series

DeepGATE™, STripFET™ VI

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

160mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6.4nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

340pF @ 48V

FET Feature

-

Power Dissipation (Max)

2.7W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

8-SO

Package / Case

8-SOIC (0.154", 3.90mm Width)

Recently Sold

NE3509M04-A

NE3509M04-A

CEL

FET RF 4V 2GHZ 4-SMINI

MCP23017-E/SO

MCP23017-E/SO

Microchip Technology

IC I/O EXPANDER I2C 16B 28SOIC

T491C107K016AT

T491C107K016AT

KEMET

CAP TANT 100UF 10% 16V 2312

REF195GS

REF195GS

Analog Devices

IC VREF SERIES 5V 8SOIC

TAJA226K010RNJ

TAJA226K010RNJ

CAP TANT 22UF 10% 10V 1206

3214W-1-502E

3214W-1-502E

Bourns

TRIMMER 5K OHM 0.25W J LEAD TOP

SMCJ24A-13-F

SMCJ24A-13-F

Diodes Incorporated

TVS DIODE 24V 38.9V SMC

STBB1-APUR

STBB1-APUR

STMicroelectronics

IC REG BCK BST ADJ 1.6A 10DFN

0451015.MRL

0451015.MRL

Littelfuse

FUSE BRD MNT 15A 65VAC/VDC 2SMD

MMSZ4700T1G

MMSZ4700T1G

ON Semiconductor

DIODE ZENER 13V 500MW SOD123

MAX3078EESA+T

MAX3078EESA+T

Maxim Integrated

IC TRANSCEIVER HALF 1/1 8SOIC

MD918A

MD918A

Central Semiconductor Corp

TRANS 2NPN 50MA 15V TO78-6