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IXTH4N150 Datasheet

IXTH4N150 Datasheet
Total Pages: 5
Size: 113.04 KB
IXYS
This datasheet covers 1 part numbers: IXTH4N150
IXTH4N150 Datasheet Page 1
IXTH4N150 Datasheet Page 2
IXTH4N150 Datasheet Page 3
IXTH4N150 Datasheet Page 4
IXTH4N150 Datasheet Page 5
IXTH4N150

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1500V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

6Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

44.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1576pF @ 25V

FET Feature

-

Power Dissipation (Max)

280W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3