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IXTH4N150

IXTH4N150

For Reference Only

Part Number IXTH4N150
PNEDA Part # IXTH4N150
Description MOSFET N-CH 1500V 4A TO-247
Manufacturer IXYS
Unit Price Request a Quote
In Stock 2,160
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 9 - May 14 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTH4N150 Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTH4N150
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTH4N150, IXTH4N150 Datasheet (Total Pages: 5, Size: 113.04 KB)
PDFIXTH4N150 Datasheet Cover
IXTH4N150 Datasheet Page 2 IXTH4N150 Datasheet Page 3 IXTH4N150 Datasheet Page 4 IXTH4N150 Datasheet Page 5

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IXTH4N150 Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1500V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44.5nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1576pF @ 25V
FET Feature-
Power Dissipation (Max)280W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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