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IXTN30N100L Datasheet

IXTN30N100L Datasheet
Total Pages: 5
Size: 125.79 KB
IXYS
This datasheet covers 1 part numbers: IXTN30N100L
IXTN30N100L Datasheet Page 1
IXTN30N100L Datasheet Page 2
IXTN30N100L Datasheet Page 3
IXTN30N100L Datasheet Page 4
IXTN30N100L Datasheet Page 5

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

450mOhm @ 15A, 20V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

545nC @ 20V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13700pF @ 25V

FET Feature

-

Power Dissipation (Max)

800W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC