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IXTN30N100L

IXTN30N100L

For Reference Only

Part Number IXTN30N100L
PNEDA Part # IXTN30N100L
Description MOSFET N-CH 1000V 30A SOT-227
Manufacturer IXYS
Unit Price Request a Quote
In Stock 5,760
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 11 - May 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

IXTN30N100L Resources

Brand IXYS
ECAD Module ECAD
Mfr. Part NumberIXTN30N100L
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
IXTN30N100L, IXTN30N100L Datasheet (Total Pages: 5, Size: 125.79 KB)
PDFIXTN30N100L Datasheet Cover
IXTN30N100L Datasheet Page 2 IXTN30N100L Datasheet Page 3 IXTN30N100L Datasheet Page 4 IXTN30N100L Datasheet Page 5

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IXTN30N100L Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs450mOhm @ 15A, 20V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs545nC @ 20V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13700pF @ 25V
FET Feature-
Power Dissipation (Max)800W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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