IXTR210P10T Datasheet
IXTR210P10T Datasheet
Total Pages: 6
Size: 198.44 KB
IXYS
This datasheet covers 1 part numbers:
IXTR210P10T
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Manufacturer IXYS Series TrenchP™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 105A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 69500pF @ 25V FET Feature - Power Dissipation (Max) 595W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case TO-247-3 |
